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MC74HC32AF Ver la hoja de datos (PDF) - ON Semiconductor

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MC74HC32AF
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC74HC32AF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MC74HC32A
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Condition
VCC
Guaranteed Limit
V –55 to 25°C 85°C 125°C Unit
VIH
Minimum High–Level Input
Voltage
Vout = 0.1V or VCC –0.1V
|Iout| 20µA
2.0
1.50
1.50 1.50
V
3.0
2.10
2.10 2.10
4.5
3.15
3.15 3.15
6.0
4.20
4.20 4.20
VIL
Maximum Low–Level Input
Voltage
Vout = 0.1V or VCC – 0.1V
|Iout| 20µA
2.0
0.50
0.50 0.50
V
3.0
0.90
0.90 0.90
4.5
1.35
1.35 1.35
6.0
1.80
1.80 1.80
VOH
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout| 20µA
2.0
1.9
4.5
4.4
6.0
5.9
1.9
1.9
V
4.4
4.4
5.9
5.9
Vin =VIH or VIL |Iout| 2.4mA 3.0
2.48
2.34 2.20
|Iout| 4.0mA 4.5
3.98
3.84 3.70
|Iout| 5.2mA 6.0
5.48
5.34 5.20
VOL
Maximum Low–Level Output
Voltage
Vin = VIH or VIL
|Iout| 20µA
2.0
0.1
4.5
0.1
6.0
0.1
0.1
0.1
V
0.1
0.1
0.1
0.1
Iin
Maximum Input Leakage
Current
Vin = VIH or VIL |Iout| 2.4mA 3.0
0.26
0.33 0.40
|Iout| 4.0mA 4.5
0.26
0.33 0.40
|Iout| 5.2mA 6.0
0.26
0.33 0.40
Vin = VCC or GND
6.0
±0.1
±1.0
±1.0
µA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0µA
6.0
1.0
10
40
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
AC CHARACTERISTICS (CL = 50pF, Input tr = tf = 6ns)
Symbol
Parameter
VCC
Guaranteed Limit
V –55 to 25°C 85°C
125°C Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
2.0
75
3.0
30
4.5
15
6.0
13
95
110
ns
40
55
19
22
16
19
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
75
3.0
27
4.5
15
6.0
13
95
110
ns
32
36
19
22
16
19
Cin
Maximum Input Capacitance
10
10
10
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V, VEE = 0 V
CPD
Power Dissipation Capacitance (Per Buffer)*
20
pF
* Used to determine the no–load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High–Speed CMOS Data Book (DL129/D).
http://onsemi.com
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