BB101M Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Lista de partido

BB101M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi -> Renesas Electronics 

Output Capacitance vs.

Gate2 to Source Voltage

4

VDS = 5 V

VG1 = 5 V

3

RG = 220 k Ω

f = 1 MHz

2

1

0

1

2

3

4

5

Gate2 to Source Voltage VG2S (V)

BB101M

9

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