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BB101C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi -> Renesas Electronics 

BB101C

Build in Biasing Circuit MOS FET IC

UHF RF Amplifier

ADE-208-505

1st. Edition

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)

• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,

Rs = 0 conditions.

Outline

CMPAK–4

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

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