BB302C Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
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BB302C Datasheet PDF : 11 Pages
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BB302C
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
VG2S
ID
Pch
Tch
Tstg
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Drain to source breakdown V(BR)DSS
12
—
voltage
Gate1 to source breakdown V(BR)G1SS
+10
—
voltage
Gate2 to source breakdown V(BR)G2SS
±10
—
voltage
Gate1 to source cutoff current IG1SS
—
—
Ratings
12
+10
–0
±10
25
100
150
–55 to +150
Max Unit
—
V
—
V
—
V
+100 nA
Gate2 to source cutoff current IG2SS
—
—
±100 nA
Gate1 to source cutoff voltage VG1S(off)
0.4
—
1.0
V
Gate2 to source cutoff voltage VG2S(off)
0.4
—
1.0
V
Drain current
I D(op)
9
13
18
mA
Forward transfer admittance |yfs|
15
20
—
mS
Input capacitance
c iss
Output capacitance
c oss
Reverse transfer capacitance crss
Power gain
PG
Noise figure
NF
2.2
3.0
4.0
pF
0.8
1.1
1.5
pF
—
0.017 0.04 pF
22
26
—
dB
—
1.7
2.2
dB
Unit
V
V
V
mA
mW
°C
°C
Test Conditions
ID = 200µA
VG1S = VG2S = 0
IG1 = +10µA
VG2S = VDS = 0
IG2 = ±10µA
VG1S = VDS = 0
VG1S = +9V
VG2S = VDS = 0
VG2S = ±9V
VG1S = VDS = 0
VDS = 9V, VG2S = 6V
ID = 100µA
VDS = 9V, VG1S = 9V
ID = 100µA
VDS = 9V, VG1 = 9V
VG2S = 6V
RG = 120kΩ
VDS = 9V, VG1 = 9V
VG2S =6V
RG = 120kΩ, f = 1kHz
VDS = 9V, VG1 = 9V
VG2S =6V, RG = 120kΩ
f = 1MHz
VDS = 9V, VG1 = 9V
VG2S =6V
RG = 120kΩ
f = 200MHz
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