IRF9630(1999) Ver la hoja de datos (PDF) - Fairchild Semiconductor

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IRF9630
(Rev.:1999)

6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs

Fairchild Semiconductor 

Data Sheet

IRF9630, RF1S9630SM

July 1999 File Number 2224.3

Title

F96

1S9

0SM

b-

t (-

A, -

0V,

00

m,

an-

wer

OS-

Ts)

utho

6.5A, 200V, 0.800 Ohm, P-Channel Power

MOSFETs

These are P-Channel enhancement mode silicon gate power

field effect transistors. They are advanced power MOSFETs

designed, tested, and guaranteed to withstand a specified

level of energy in the breakdown avalanche mode of

operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

converters, motor drivers, relay drivers and drivers for other

high-power switching devices. The high input impedance

allows these types to be operated directly from integrated

circuits.

Formerly developmental type TA17512.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF9630

TO-220AB

IRF9630

RF1S9630SM

TO-263AB

RF1S9630

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-263AB variant in the tape and reel, i.e., RF1S9630SM9A.

ey- Packaging

rds

ter-

JEDEC TO-220AB

rpo-

on,

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

an-

wer

OS-

Ts,

-

0AB

O-

3AB

e-

r ()

Features

• 6.5A, 200V

• rDS(ON) = 0.800Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

G

S

JEDEC TO-263AB

GATE

SOURCE

DRAIN

(FLANGE)

©2001 Fairchild Semiconductor Corporation

IRF9630, RF1S9630SM Rev. A

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