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MGW20N60D Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™ Designer's Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operations at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
• Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
• High Speed Eoff: 60 mJ per Amp typical at 125°C
• High Short Circuit Capability – 10 ms minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA
C
G
E
Order this document
by MGW20N60D/D
MGW20N60D
Motorola Preferred Device
IGBT & DIODE IN TO–247
20 A @ 90°C
32 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
G
C
E
CASE 340F–03, Style 4
TO–247AE
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600
Vdc
600
Vdc
± 20
Vdc
32
Adc
20
64
Apk
142
Watts
1.14
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
°C
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 Ω)
tsc
10
ms
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
RθJC
RθJC
RθJA
0.88
°C/W
2.00
45
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
TL
260
°C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data
1
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