BGA420 Ver la hoja de datos (PDF) - Infineon Technologies
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BGA420 Datasheet PDF : 8 Pages
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Si-MMIC-Amplifier in SIEGET 25-Technologie
BGA420
• Cascadable 50 Ω-gain block
• Unconditionally stable
• Gain |S21|2 = 13 dB at 1.8 GHz
IP3out = +13 dBm at 1.8 GHz
(VD = 3 V, ID = typ. 6.7 mA)
• Noise figure NF = 2.2 dB at 1.8 GHz
• Reverse isolation > 28 dB and
return loss IN / OUT > 12 dB at 1.8 GHz
• Pb-free (RoHS compliant) package
3
4
2
1
VD
4
3
OUT
Circuit Diagram
1
IN
2
GND
EHA07385
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BGA420
Marking
BLs
1, IN
Pin Configuration
Package
2, GND 3, OUT 4, VD SOT343
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation
TS = 110 °C
RF input power
Junction temperature
Ambient temperature
Storage temperature
Symbol
ID
VD
Ptot
PRFin
Tj
TA
Tstg
Value
15
6
90
0
150
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
≤ 410
Unit
mA
V
mW
dBm
°C
K/W
1
2011-07-26
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