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BLF278 Ver la hoja de datos (PDF) - Advanced Semiconductor

Número de pieza
componentes Descripción
Lista de partido
BLF278
ASI
Advanced Semiconductor ASI
BLF278 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
ERROR! REFERENCE SOURCE NBOLT FFO2U7N8D.
505.000 0.98904 177.900 0.09288 24.3178 0.02253 95.5649
520.000 0.98753 177.826 0.08876 24.1062 0.02288 95.4464
535.000 0.98584 177.697 0.08378 27.3328 0.02415 97.1222
550.000 0.99250 177.572 0.08247 29.3983 0.02494 96.0530
565.000 0.99413 177.257 0.07822 27.2453 0.02571 97.8381
580.000 0.99245 177.031 0.07467 27.8200 0.02530 97.2712
595.000 0.98715 176.735 0.07101 32.0492 0.02706 96.9025
610.000 0.98797 176.550 0.06786 31.2308 0.02796 96.6285
625.000 0.98881 176.455 0.06254 32.4249 0.02841 97.4609
640.000 0.98908 176.285 0.06360 36.9496 0.02939 97.4627
655.000 0.98753 176.016 0.06277 37.0072 0.02935 98.2586
670.000 0.98643 175.910 0.06004 40.0063 0.03090 98.6724
685.000 0.98840 175.782 0.06111 37.8170 0.03147 99.1738
700.000 0.98846 175.800 0.05886 44.3227 0.03158 100.273
710.000 0.98530 175.570 0.05697 43.3396 0.03291 100.088
! Unit: BLF278
! S1E 1+1Die in an AR pkg.
!
! Meas: 110L#24
! Vds=50Vdc, Idq=400ma, Vgsth=4.10Vdc, wafer=00712-17
!
0.98953 -178.261
0.98714 -178.215
0.99400 -178.628
0.99166 -178.778
0.99387 -178.902
0.98799 -179.373
0.98797 -179.626
0.98858 -179.785
0.99071 -179.900
0.98654 -179.575
0.98868 -179.929
0.99076 179.932
0.98962 179.695
0.99068 179.587
0.99163 179.411
SPICE MODEL
*HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET
*TO GENERATE S PARAMETER MATCHING DATA SHHET, SET VG = 4.3 V FOR IDQ = 455 Ma
*MODEL APPLICABLE FOR BLF278
*NOTE:- HP/EESOF USES ‘GATE DRAIN SOURCE’ ORDER
*
( ;D G S)
.SUBCKT BLF278/PF
20 10 30
LG
10
11
0.29n
RGATE 11
12
0.73
CG
10
30
0.01P
CRSS
12
17
15.3P
CISS
12
14
490P
LS
14
30
0.2N
CS
14
30
0.02P
LD
17
20
0.1N
CD
20
30
2.9P
R_RC
16
17
2.2
C_RC
14
16
31.2P
MOS
13
12
14
14 BLF278 MOS L = 1.1 U W = 0.778 ;D G S B LEVEL1
JFET
17
14
13
BLF278 JF
;D G S
DBODY
14
17
BLF278 DB
;P N
MODEL BLF278 MOS
MODEL BLF278 JF
MODEL BLF278 DB
ENDS
S
NMOS
NJF
D
(VTO =4 KP = 0.9 E-5 LAMBDA = 0.15 RD = 0.065 RS = 0.07)
(VTO = 6.8 BETA = 1 LAMBDA =1)
(CJO = 1100 P RS = 0.25 VJ = 0.6 M = 0.4 BV = 13)
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
6/7

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