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CPV362MM Datasheet PDF : 8 Pages
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CPV362MM
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
— 0.42 — V/°C VGE = 0V, IC = 1.0mA
— 2.2 3.3
IC = 4.6A
VGE = 15V
— 2.8 — V IC = 7.9A
See Fig. 2, 5
— 2.5 —
IC = 4.6A, T J = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 5.5
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
2.7 3.8 — S VCE = 100V, I C =8.0A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 1700
VGE = 0V, VCE = 600V, T J = 150°C
VFM
Diode Forward Voltage Drop
— 1.4 1.7 V IC = 8.0A
See Fig. 13
IGES
Gate-to-Emitter Leakage Current
— 1.3 1.6
IC = 8.0A, T J = 150°C
— — ±500 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 16 24
IC = 8.0A
— 3.6 5.2
— 6.0 9.0
nC VCC = 400V
See Fig. 8
— 66 —
TJ = 25°C
— 28 — ns IC = 4.6A, V CC = 480V
— 140 210
VGE = 15V, R G = 50Ω
— 53 100
Energy losses include "tail" and
— 0.18 —
diode reverse recovery.
— 0.14 — mJ See Fig. 9, 10, 11, 18
— 0.32 0.48
10 — —
— 64 —
µs VCC = 360V, T J = 125°C
VGE = 15V, R G = 50Ω, VCPK < 500V
TJ = 150°C, See Fig. 9, 10, 11, 18
— 25 —
— 240 —
ns IC = 4.6A, V CC = 480V
VGE = 15V, R G = 50Ω
— 160 —
Energy losses include "tail" and
— 0.56 — mJ diode reverse recovery.
— 365 —
— 47 —
VGE = 0V
pF VCC = 30V
See Fig. 7
— 4.8 —
ƒ = 1.0MHz
— 37 55 ns TJ = 25°C See Fig.
— 55 90
— 3.5 5.0
TJ = 125°C
14
A TJ = 25°C See Fig.
IF = 8.0A
— 4.5 8.0
TJ = 125°C
15
— 65 138 nC TJ = 25°C See Fig.
V R = 200V
— 124 360
TJ = 125°C
16
— 240 — A/µs TJ = 25°C See Fig.
di/dt = 200A/µs
— 210 —
TJ = 125°C 17
Notes:
Repetitive rating; V GE=20V, pulse width limited
by max. junction temperature. ( See fig. 20)
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 50Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs,
single shot.
C-410
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