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BAW156

Low-leakage double diode

Philips Electronics 

Philips Semiconductors

Low-leakage double diode

Product specification

BAW156

FEATURES

• Plastic SMD package

• Low leakage current: typ. 3 pA

• Switching time: typ. 0.8 µs

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 500 mA.

PINNING

PIN

1

2

3

cathode

cathode

common anode

DESCRIPTION

handbook, 4 columns

2

1

APPLICATION

• Low-leakage current applications in

surface mounted circuits.

DESCRIPTION

Epitaxial, medium-speed switching,

double diode in a small SOT23 plastic

SMD package. The diodes are in

common anode configuration.

3

Top view

2

1

3

MAM206

Marking code: JZp = made in Hong Kong; JZt = made in Malaysia.

Fig.1 Simplified outline (SOT23) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

Per diode

VRRM

VR

IF

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

IFRM

repetitive peak forward current

IFSM

non-repetitive peak forward

current

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

−

−

single diode loaded; note 1; see Fig.2 −

double diode loaded; note 1; see Fig.2 −

−

square wave; Tj = 25 °C prior to surge;

see Fig.4

tp = 1 µs

−

tp = 1 ms

−

tp = 1 s

−

Tamb ≤ 25 °C; note 1

−

−65

−

Note

1. Device mounted on a FR4 printed-circuit board.

MAX. UNIT

85

V

75

V

160

mA

140

mA

500

mA

4

A

1

A

0.5

A

250

mW

+150 °C

150

°C

1999 May 11

2

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