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ZHCS400

SOD323 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”

Zetex => Diodes 

SOD323 SILICON HIGH CURRENT

SCHOTTKY BARRIER DIODE “SuperBAT”

ISSUE 1- NOVEMBER 1998 7

FEATURES:

• Low VF

• High Current Capability

• Miniature Surface Mount Package

APPLICATIONS:

• DC - DC converters

• Mobile telecomms

• PCMCIA

Partmark Detail - BD

ZHCS400

C

A

SOD323

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Continuous Reverse Voltage

Forward Current (Continuous)

Forward Voltage @ IF =400mA

Average Peak Forward Current; D.C. = 50%

Non Repetitive Forward Current t≤100µs

t≤10ms

Power Dissipation at Tamb=25°C

Storage Temperature Range

Junction Temperature

SYMBOL

VR

IF

VF

IFAV

IFSM

Ptot

Tstg

Tj

VALUE

40

400

500

1000

6.75

3

250

-55 to +150

125

UNIT

V

mA

mV

mA

A

A

mW

°C

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Reverse Breakdown V(BR)R

Voltage

40

60

V

IR=200µA

Forward Voltage

VF

Reverse Current

IR

Diode Capacitance CD

Reverse Recovery

trr

Time

270 300 mV IF=50mA*

300 350 mV IF=100mA*

370 460 mV IF=250mA*

425 500 mV IF=400mA*

550 670 mV IF=750mA*

640 780 mV IF=1000mA*

810 1050 mV IF=1500mA*

440

mV IF=500mA, Tamb=100°C*

15

40

µA VR=30V

20

pF

f=1MHz,VR=25V

10

ns switched from

IF = 500mA to IR = 500mA

Measured at IR = 50mA

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