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IKA15N60T

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Infineon Technologies 

IKA15N60T

TRENCHSTOP™ Series

q

D=0.5

100K/W

10-1K/W

0.2

0.1

0.05

0.02

0.01

R,(K/W)

1.634

1.541

0.423

0.223

0.236

0.122

R1

, (s)

4.13

1.00

3.83*10-2

3.26*10-3

4.82*10-4

6.64*10-5

R2

single pulse

C1=1/R1 C2=2/R2

10µs 100µs 1ms 10ms 100ms 1s 10s

tP, PULSE WIDTH

Figure 21. IGBT transient thermal

impedance

(D = tp / T)

D=0.5

100K/W

10-1K/W

0.2

0.1

0.05

0.02

0.01

R,(K/W)

1.7757

1.4115

0.5014

0.3862

0.445

0.3188

R1

, (s)

3.93

0.90

6.00*10-2

5.97*10-3

9.69*10-4

1.95*10-4

R2

6.53*10-2

single pulse

C1=1/R1 C2=2/R2

10-2K/W

10µs 100µs 1ms 10ms 100ms 1s 10s

tP, PULSE WIDTH

Figure 22. Diode transient thermal

impedance as a function of pulse

width

(D=tP/T)

200ns

160ns

TJ=175°C

120ns

80ns

40ns

TJ=25°C

0ns

400A/µs

600A/µs

800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope

(VR=400V, IF=15A,

Dynamic test circuit in Figure E)

1.0µC

0.8µC

TJ=175°C

0.6µC

0.4µC

TJ=25°C

0.2µC

0.0µC

400A/µs

600A/µs

800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge

as a function of diode current

slope

(VR = 400V, IF = 15A,

Dynamic test circuit in Figure E)

IFAG IPC TD VLS

9

Rev. 2.6 25.07.2016

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