IKB15N60T(2015) Ver la hoja de datos (PDF) - Infineon Technologies

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IKB15N60T
(Rev.:2015)

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Infineon Technologies 

IKB15N60T

TRENCHSTOP™ Series

q

40A

35A

30A

VGE=20V

15V

25A

13V

11V

20A

9V

15A

7V

10A

5A

0A

0V

1V

2V

3V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

(Tj = 25°C)

40A

35A

30A

VGE=20V

15V

25A

13V

11V

20A

9V

15A

7V

10A

5A

0A

0V

1V

2V

3V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristic

(Tj = 175°C)

35A

30A

25A

20A

15A

10A

5A

TJ=175°C

25°C

0A

0V

2V

4V

6V

8V

VGE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic

(VCE=20V)

2.5V

2.0V

I =30A

C

1.5V

1.0V

IC=15A

I =7.5A

C

0.5V

0.0V

0°C

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

saturation voltage as a function

of junction temperature

(VGE = 15V)

IFAG IPC TD VLS

5

Rev. 2.8 11.05.2015

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