¡ electronic components
KGF1175B/1175
ABSOLUTE MAXIMUM RATINGS
Item
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VGS
IDS
Ptot
Tch
Tstg
Condition
Ta = 25°C
Ta = 25°C
Ta = 25°C
Ta = 25°C
—
—
Unit
Min.
V
—
V
–3.0
mA
—
mW
—
°C
—
°C
–45
Max.
7.0
0.4
60
200
150
125
ELECTRICAL CHARACTERISTICS
Item
Gate-source leakage current
Gate-drain leakage current
Drain-source leakage current
Drain current
Operating current
Gate-source cut-off voltage
Transconductance
Noise figure
Linear gain
Output power
Third-order intercept point
Symbol
IGSS
IGDO
IDS(off)
IDSS
ID
VGS(off)
gm
F
GLIN
PO
IP3
Condition
VGS = –3 V
VGD = –8 V
VDS = 3 V, VGS = –2.5 V
VDS = 3 V, VGS = 0 V
(*1), PIN = –20 dBm
VDS = 3 V, IDS = 120 mA
VDS = 3 V, IDS = 1.5 mA
(*1)
(*1), PIN = –20 dBm
(*1), PIN = –3 dBm
(*1), f2 = 851 MHz
Unit
mA
mA
mA
mA
mA
V
mS
dB
dB
dBm
dBm
*1 Self-bias condition: VDD = 5.0 V±0.25 V, VG = 0 V, f = 850 MHz
Min.
—
—
—
15
—
–2.0
8
—
12.0
3.0
—
(Ta = 25°C)
Typ. Max.
—
12
—
60
—
120
—
—
—
2.5
—
–1.0
—
—
—
2.0
—
—
—
—
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