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MBR150 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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MBR150 Datasheet PDF : 2 Pages
1 2
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
f LJnc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MBR150, MBR160
Features
• Low Reverse Current
• Low Stored Charge. Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERE - 50 AND60 VOLTS
Mechanical Characteristics:
• Case: Epoxv. Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderahle
• Lead Temperature for Soldering Purposes:
260CC Max. for 10 Seconds
• Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage
VRRM
V
MBR150
50
MBR160
GO
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
VR
RMS Reverse Voltage
'
MBR150 VR(RMS)
35
V
MBR160
42
Average Rectified Forward Current (Note 1)
lo
(VR<equiv) s 0.2 VR(dC), TL = 90CC,
R,UA = 80°C/W PC. Board Mounting, TA = 55;C)
1.0
A
Nonrepetitive Peak Surge Current
(Surge applied at rated toad conditions,
halfwave, single phase, 60 Hz, TL = 70nC)
Operating and Storage Junction Temperature
Range (Reverse Voltage Applied)
IFSM
25
A
(for one
cycle)
•c TJ. Ts1g -65 to
+ 150
THERMAL CHARACTERISTICS (Notes 1 and 2)
Characteristic
Symbol Max Unit
Thermal Resistance, Junction-to-Ambient
RIIJA
80 ^C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Lead Temperature reference is cathode lead 1/32" from case.
2. Pulse Test: Pulse Width = 300 us. Duty Cycle < 2.0%
DO-41
AXIAL LEAD
CASE 59
STYLE 1
MARKING DIAGRAM
A
= Assembly Location
MBRIxO = Device Code
x = 5 or 6
Y
= Year
WW = WorKWeek
Quality Semi-Conductors

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