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MCR708A1 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . PNPN devices designed for high volume, low cost consumer applications such as
temperature, light and speed control; process and remote control; and warning
systems where reliability of operation is critical.
• Small Size
• Passivated Die Surface for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Recommend Electrical Replacement for C106
• Available in Two Package Styles:
Surface Mount Leadforms — Case 369A
Miniature Plastic Package — Straight Leads — Case 369
ORDERING INFORMATION
• To Obtain “DPAK” in Surface Mount Leadform (Case 369A):
Shipped in Sleeves — No Suffix, i.e., MCR706A
Shipped in 16 mm Tape and Reel — Add “RL” Suffix to Device Number, i.e.,
MCR706ARL
• To Obtain “DPAK” in Straight Lead Version:
Shipped in Sleeves — Add ‘1’ Suffix to Device Number, i.e., MCR706A1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Characteristic
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage
(1)
VDRM
or
(1/2 Sine Wave)
VRRM
(RGK = 1000 Ohms,
MCR703A1, MCR703A
100
TC = –40 to +110°C)
MCR704A1, MCR704A
200
MCR706A1, MCR706A
400
MCR708A1, MCR708A
600
Volts
Peak Non-repetitive Reverse Blocking Voltage
VRSM
(1/2 Sine Wave, RGK = 1000 Ohms,
TC = –40 to +110°C)
MCR703A1, MCR703A
150
MCR704A1, MCR704A
250
MCR706A1, MCR706A
450
MCR708A1, MCR708A
650
Volts
Average On-State Current
(TC = –40 to +90°C)
IT(AV)
2.6
Amps
(TC = +100°C)
1.6
Surge On-State Current (1/2 Sine Wave, 60 Hz, TC =
ITSM
25
Amps
+90°C)
35
(1/2 Sine Wave, 1.5 ms TC =
+90°C)
Circuit Fusing (t = 8.3 ms)
I2t
2.6
A2s
Peak Gate Power (Pulse Width = 10 µs, TC = 90°C)
PGM
0.5
Watt
Average Gate Power (t = 8.3 ms, TC = 90°C)
PG(AV)
0.1
Watt
Peak Forward Gate Current
IGM
0.2
Amp
Peak Reverse Gate Voltage
VRGM
6
Volts
Operating Junction Temperature Range
TJ
–40 to +110
°C
Storage Temperature Range
Tstg –40 to +150
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or
negative gate voltage; however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data
© Motorola, Inc. 1995
Order this document
by MCR703A/D
MCR703A
thru
MCR708A*
*Motorola preferred devices
SCRs
4.0 AMPERES RMS
100 thru 600 VOLTS
G
A
K
A
G
A
K
CASE 369A
STYLE 5
A
G
A
K
CASE 369
STYLE 5
0.190
4.826
0.243
6.172
ǒinmchmesǓ
Figure 1. Minimum Pad
Sizes for
Surface Mounting
1
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