MCR708A1 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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MCR708A1 Datasheet PDF : 2 Pages
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Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
MCR703A
thru
MCR708A*
. . . PNPN devices designed for high volume, low cost consumer applications such as
temperature, light and speed control; process and remote control; and warning
systems where reliability of operation is critical.
• Small Size
• Passivated Die Surface for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Recommend Electrical Replacement for C106
• Available in Two Package Styles:
Surface Mount Leadforms — Case 369A
Miniature Plastic Package — Straight Leads — Case 369
ORDERING INFORMATION
• To Obtain "DPAK" in Surface Mount Leadform (Case 369A):
Shipped in Sleeves — No Suffix, i.e., MCR706A
Shipped in 16 mm Tape and Reel — Add "RL" Suffix to Device Number, i.e.,
MCR706ARL
• To Obtain "DPAK" in Straight Lead Version:
Shipped in Sleeves — Add '1' Suffix to Device Number, i.e., MCR706A1
SCRs
4.0 AMPERES RMS
100 thru 600 VOLTS
MAXIMUM RATINGS (Tj = 25°C unless otherwise noted.)
Characteristic
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage VDRM
Volts
or
(1/2 Sine Wave)
VRRM
(RGK = 1 ooo ohms,
MCR/OSAI , MCRTOSA
100
TC = -40 to +110°C)
MCR704A1, MCR704A
200
MCR706A1.MCR706A
400
MCR708A1, MCR708A
600
CASE 369A
Peak Non-repetitive Reverse Blocking Voltage
VRSM
(1/2 Sine Wave, RQK = 1000 Ohms,
TC = -40 to +110°C)
MCR703A1, MCR703A
150
MCR704A1, MCR704A
250
MCR706A1 , MCR706A
450
MCR708A1 , MCR708A
650
Volts
CASE 369
Average On-State Current
(TC = -40 to +90°C)
!T(AV)
2.6
Amps
(TC = +100°C)
1.6
Surge On-State Current (1/2 Sine Wave, 60 Hz, TC =
!TSM
25
Amps
+90°C)
35
(1/2 Sine Wave, 1.5 ms TC =
+90°C)
Circuit Fusing (t = 8.3 ms)
|2t
2.6
A2S
Peak Gate Power (Pulse Width = 10 us, TC = 90°C)
PGM
0.5
Watt
Average Gate Power (t = 8.3 ms, TC = 90°C)
PG(AV)
0.1
Watt
Peak Forward Gate Current
!GM
0.2
Amp
Peak Reverse Gate Voltage
VRGM
6
Volts
Operating Junction Temperature Range
Storage Temperature Range
TJ
-40 to +110
°C
Tstg -40 to+150
°c
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or
negative gate voltage; however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurateand reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
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