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OM6232SS Ver la hoja de datos (PDF) - Omnirel Corp => IRF

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Lista de partido
OM6232SS Datasheet PDF : 4 Pages
1 2 3 4
OM6227SS - OM6233SS
ELECTRICAL CHARACTERISTICS: 1000V (Per MOSFET) (TC = 25° unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)
V(BR)DSS
1000
-
-
Zero Gate Voltage Drain
IDSS
(VDS = 1000 V, VGS = 0)
-
-
10
(VDS = 1000 V, VGS = 0, TJ = 125° C)
-
-
100
Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
IGSSF
-
-
100
Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSR
-
-
100
ON CHARACTERISTICS*
Gate-Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc
(TJ = 125° C)
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 5 Adc)
Drain-Source On-Voltage (VGS = 10 Vdc)
(ID = 10 A)
(ID = 5 A, TJ = 125° C)
Forward Transconductance (VDS = 15 Vdc, ID = 5 Adc)
DYNAMIC CHARACTERISTICS
VGS(th)
rDS(on)
VDS(on)
gFS
2.0
3.0
4.0
1.5
-
3.5
-
-
1.3
-
-
15
-
-
15.3
5.0
-
-
Input Capacitance
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS
Ciss
Coss
Crss
-
5500
-
-
530
-
-
90
-
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDD = 500 V, ID = 10 A,
Rgen = 9.1 ohms
VGS = 10 V)
(VDS = 400 V, ID = 10 A,
VGS = 10 V)
SOURCE DRAIN DIODE CHARACTERISTICS
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
-
60
-
-
115
-
-
240
-
-
140
-
-
140
-
-
-
-
-
-
-
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
(IS = 10 A, d/dt = 100 A/µs)
VSD
-
-
1.1
ton
**
trr
-
600
1100
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%
** Limited by circuit inductance
Unit
Vdc
mAdc
nAdc
nAdc
Vdc
Ohm
Vdc
mhos
pF
ns
-nC
Vdc
ns
ABSOLUTE MAXIMUM RATINGS PER MOSFET (TC = 25°C unless otherwise noted)
Parameter
OM6227/
OM6231
OM6228/
OM6232
OM6230/
OM6233 Units
VDS
VDGR
ID @ TC = 25°C
IDM
PD @ TC = 25°C
PD
WDSS (1)
Drain-Source Voltage
Drain-Gate Voltage (RGS = 1 M )
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Derate Above 25°C Case
Single Pulse Energy
Drain-To-Source @ 25°C
400
400
24
92
165
1.31
1000
500
500
22
85
165
1.31
1000
1000
1000
10
30
165
1.31
V
V
A
A
W
W/°C
500
mJ
TJ
Tstg
Lead Temperature
Operating and
Storage Temperature Range
(1/8" from case for 5 secs.)
-55 to +150 -55 to +150 -55 to +150 °C
275
275
275
°C
3.1
THERMAL RESISTANCE (Maximum) at TA = 25°C
RthJC
Junction-to-Case
.76
RthJA
Junction-to-Ambient
35
3.1 - 125
°C/W
°C/W
Free Air Operation

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