MJD32C Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Lista de partido

MJD32C

Silicon PNP transistor in a TO-252 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

MJD32C

Rev.E May.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Current – Continuous(Pulse)

Base Current - Continuous

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICP

IB

PC(TC=25℃ )

PC

Tj

Tstg

数值

Rating

-100

-100

-5.0

-3.0

-5.0

-1.0

15

1.56

150

-65～150

单位

Unit

V

V

V

A

A

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Emitter Breakdown

Voltage*

Collector Cut-Off Current

符号

Symbol

*VCEO

ICEO

Collector Cut-Off Current

ICES

Emitter Cut-Off Current

IEBO

DC Current Gain*

Collector to Emitter Saturation

Voltage*

Base to Emitter On Voltage*

*hFE

*VCE(sat)

*VBE(on)

Current- Gain Bandwidth Product

fT

*:pw(脉宽)≤300µs,duty cycle(占空比)≤2%.

测试条件

Test Conditions

最小值 典型值 最大值 单位

Min Typ Max Unit

IC=-30mA IB=0

-100

V

VCE=-60V IB=0

VCE=-100V VBE=0

VBE=-5.0V IC=0

VCE=-4.0V IC=-3.0A

15

-50 μA

-20 μA

-1.0 mA

75

IC=-3.0A IB=-375mA

-1.2 V

VCE=-4.0A IC=-3.0A

VCE=-10V IC=-100mA 3

-1.8 V

MHz

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