MMDT5401G(2014) Ver la hoja de datos (PDF) - Unisonic Technologies

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MMDT5401G
(Rev.:2014)

HIGH VOLTAGE SWITCHING TRANSISTOR

Unisonic Technologies 

MMDT5401

Preliminary

DUAL TRANSISTOR

 ABSOLUATE MAXIUM RATINGS (TA=25°C unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector -Base Voltage

VCBO

-160

V

Collector -Emitter Voltage

VCEO

-150

V

Emitter -Base Voltage

VEBO

-5

V

DC Collector Current

IC

-600

mA

Power Dissipation

PD

200

mW

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Base Breakdown Voltage

VCBO IC=-100A, IE=0

Collector-Emitter Breakdown Voltage VCEO IC=-1mA, IB=0

Emitter-Base Breakdown Voltage

VEBO IE=-10A, IC=0

Collector Cut-off Current

ICBO VCB=-120V, IE=0

Emitter Cut-off Current

IEBO VBE=-3V, IC =0

VCE=-5V, IC =-1mA

DC Current Gain(note)

hFE VCE=-5V, IC =-10mA

VCE=-5V, IC =-50mA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-10mA, IB=-1mA

IC=-50mA, IB=-5mA

Current Gain Bandwidth Product

fT VCE=-10V, IC =-10mA, f=100MHz

Output Capacitance

Cob VCB=-10V, IE=0, f=1MHz

Noise Figure

NF

Note: Pulse test: PW<300s, Duty Cycle<2%

IC=-0.25mA, VCE=-5V

RS=1k, f=10Hz ~ 15.7kHz

MIN

-160

-150

-5

80

80

80

100

TYP

160

MAX

-50

-50

UNIT

V

V

V

nA

nA

400

-0.2

V

-0.5

-1

V

-1

300 MHz

6.0 pF

8 dB

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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