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MHPM7B8A120A

Hybrid Power Module

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

BRAKE CIRCUIT

Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)

IGES

–

Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)

ICES

TJ = 25°C

–

TJ = 125°C

–

Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)

Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)

VGE(th)

V(BR)CES

4.0

1200

Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 8.0 A)

VCE(SAT)

–

Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)

Cies

–

Input Gate Charge (VCE = 600 V, IC = 8.0 A, VGE = 15 V)

Fall Time – Inductive Load

(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)

QT

–

tfi

–

Turn-On Energy

(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)

E(on)

–

Turn-Off Energy

(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)

E(off)

–

Diode Forward Voltage (IF = 8.0 A)

VF

–

Diode Reverse Leakage Current

Thermal Resistance – IGBT

Thermal Resistance – Diode

IR

–

RθJC

–

RθJC

–

Typ

–

–

–

6.0

1300

2.5

1000

75

350

–

–

1.6

–

–

–

Max

Unit

± 20

µA

100

µA

500

µA

8.0

V

–

V

3.5

V

–

pF

–

nC

500

ns

1.0

mJ

1.0

mJ

2.2

V

50

µA

2.2

°C/W

3.7

°C/W

MOTOROLA

MHPM7B8A120A

3

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