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NE4210M01-T1
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC => Renesas Technology
NE4210M01-T1 Datasheet PDF : 12 Pages
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NE4210M01
RECOMMENDED OPERATING CONDITION (T
A
= 25
°
C)
Characteristic
Drain to Source Voltage
Drain Current
Input Power
Symbol
V
DS
I
D
P
in
MIN.
TYP.
2
10
MAX.
3
20
+5
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figuer
Associated Gain
Symbol
I
GSO
I
DSS
V
GS(off)
g
m
NF
G
a
Test Conditions
V
GS
=
−
3 V
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
D
= 100
µ
A
V
DS
= 2 V, I
D
= 10 mA
f = 12 GHz
f = 4 GHz
V
DS
= 2 V
I
D
= 10 mA
f = 12 GHz
f = 4 GHz
MIN.
TYP.
MAX.
Unit
0.5
10
µ
A
20
60
90
mA
−
0.2
−
0.7
−
2.0
V
50
65
mS
0.8
1.1
dB
0.4
9.0
11.0
dB
16.0
2
Preliminary Data Sheet
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