PF0121 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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PF0121

MOS FET Power Amplifier Module for GSM Mobile Phone

Hitachi -> Renesas Electronics 

Test Fixture Pattern

Unit: mm

26.5

3.5

2.88

4.5 3 16

2.88

64

28

4

PF0121

VAPC

VDD

100

Grass Epoxy Double sided PCB

(t = 1.6 mm, εr = 4.8)

C1=0.01µF (Ceramic Chip Capacitor)

C2=330µF (Aluminum Electrolyte Capacitor)

L1=L2 : BLO2RN1-R62 (Manufacturer : MURATA) or equivalent (Ferrite Bead Inductor)

The coefficient of RF line loss in the P.C.B is showed bellow.

1/ (S21)2 = 1/ (0.9805)2 = 1.068

Mechanical Characteristics

Item

Torque for screw up the heatsink flange

Warp size of the heatsink flange: S

Conditions

M3 Screw Bolts

S

Spec

4 to 6 kg•cm

S=0

+0.3/–0 mm

5

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