A1806 Ver la hoja de datos (PDF) - Panasonic Corporation
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A1806 Datasheet PDF : 4 Pages
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Transistors
2SA1806
Silicon PNP epitaxial planar type
For high speed switching
■ Features
• High speed switching
• Low collector-emitter saturation voltage VCE(sat)
• SS-Mini type package allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−15
V
Collector-emitter voltage (Base open) VCEO
−15
V
Emitter-base voltage (Collector open) VEBO
−4
V
Collector current
IC
−50
mA
Peak collector current
ICP
−100
mA
Collector power dissipation
Junction temperature
Storage temperature
PC
125
mW
Tj
125
°C
Tstg −55 to +125 °C
0.2+–00..015
3
Unit: mm
0.15+–00..015
1
2
(0.5) (0.5)
1.0±0.1
1.6±0.1
5˚
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-75
SSMini3-G1 Package
Marking Symbol: AK
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = −8 V, IE = 0
Emitter-base cutoff current (Collector open) IEBO VCE = −3 V, IC = 0
Forward current transfer ratio
hFE1 * VCE = −1 V, IC = −10 mA
50
hFE2 VCE = −1 V, IC = −1 mA
30
Collector-emitter saturation voltage
VCE(sat) IC = −10 mA, IB = −1 mA
Transition frequency
fT
VCB = −10 V, IE = 10 mA, f = 200 MHz 800
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −5 V, IE = 0, f = 1 MHz
− 0.1
− 0.1
150
− 0.1
1 500
1
− 0.2
µA
µA
V
MHz
pF
Turn-on time
Turn-off time
Storage time
ton Refer to the switching time measurement circuit
12
ns
toff
20
ns
tstg
19
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE1
50 to 120
90 to 150
Publication date: March 2003
SJC00033BED
1
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