2SC4765 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
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Lista de partido
2SC4765 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC4765
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 300mA; lc= 0
5
V
VcE(sat) Collector-Emitter Saturation Voltage lc=3.5A; ls=1.0A
VeE(sat) Base-Emitter Saturation Voltage
lc=3.5A;!B=1.0A
ICBO
Collector Cutoff Current
VCB= 1700V; IE=0
5.0
V
1.5
V
1.0 mA
IEBO
Emitter Cutoff Current
VEB=5V;lc=0
66
200 mA
hpE-1
DC Current Gain
lc=1A; VCE=5V
8
hFE-2
DC Current Gain
lc= 3.5A ; VCE= 5V
3.5
7.5
VECF C-E Diode Forward Voltage
IF= 3.5A
2.0
V
fr
Current-Gain—Bandwidth Product
lc=0.1A;VoE=10V
1
3
MHz
COB
Output Capadtance
IE=0 ; VcB=10V;ftest=1.0MHz
250
pF
Switching times ;Resistive load
tstg
Storage Time
tf
Fall Time
lc=3.5A, IB1=0.7A; IB2=-1.4A
RL= 56 fi
3.0
us
0.2
us
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