C4262 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Lista de partido

C4262

Silicon NPN Epitaxial

Renesas Electronics 

2SC4262

Electrical Characteristics

Item

Symbol Min

Collector to base breakdown voltage

V(BR)CBO

20

Collector to emitter breakdown voltage V(BR)CEO

15

Collector cutoff current

ICBO

—

Emitter cutoff current

IEBO

—

Collector to emitter saturation voltage

VCE(sat)

—

DC current transfer ratio

hFE

50

Collector output capacitance

Cob

—

Gain bandwidth product

fT

1.4

(Ta = 25°C)

Typ Max Unit

Test conditions

—

—

V IC = 10 µA, IE = 0

—

—

V IC = 1 mA, RBE = ∞

—

0.5

µA VCB = 15 V, IE = 0

—

1.0

µA VEB = 3 V, IC = 0

—

0.5

V IC = 20 mA, IB = 4 mA

—

200

VCE = 10 V, IC = 5 mA

—

1.0

pF VCB = 10 V, IE = 0, f = 1MHz

2.9

—

GHz VCE = 10 V, IC = 5 mA

Rev.3.00 Aug 10, 2005 page 2 of 4

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