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BAS40W Ver la hoja de datos (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

Número de pieza
componentes Descripción
Lista de partido
BAS40W
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  HTSEMI
BAS40W Datasheet PDF : 2 Pages
1 2
SCHOTTKY DIODE
FEATURES
z Low Forward Voltage
z Fast Switching
BAS40W/-04/-05/-06
SOT-323
BAS40W MARKING: 43• BAS40W-06 MARKING: 46
Maximum Ratings @TA=25
BAS40W-05 MARKING45
BAS40W-04 MARKING44
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking Voltage
Forward continuous Current
Power Dissipation
Thermal Resistance. Junction to Ambient Air
Junction temperature
Storage temperature range
Symbol
VRRM
VRWM
VR
IFM
PD
RθJA
TJ
TSTG
Limits
40
200
150
833
125
-65-125
Unit
V
mA
mW
/W
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse Recovery time
Symbol
Test conditions
MIN
V(BR)
IR= 10μA
40
IR
VR=30V
VF
IF=1mA
IF=40mA
CD
VR=0,f=1MHz
t rr
Irr=1mA, IR=IF=10mA
RL=100
MAX
200
380
1000
5
5
UNIT
V
nA
mV
pF
nS
1 
JinYu
semiconductor
www.htsemi.com
Date:2011/05

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