RFM12N10 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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Lista de partido
RFM12N10 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
RFM12N08, RFM12N10, RFP12N08, RFP12N10
12A, 80Vand 100V, 0.200 Ohm, N-Channel
Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM12N08
TO-204AA
RFM12N08
RFM12N10
TO-204AA
RFM12N10
RFP12N08
TO-220AB
RFP12N08
RFP12N10
TO-220AB
RFP12N10
NOTE: When ordering, use the entire part number.
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
Features
• 12A, 80V and 100V
' rDS(ON) = 0-200ii
• Related Literature
Symbol
D
o
JEDEC TO-220AB
DRAIN
(TAB)
GATE (PIN 1)
SOURCE (PIN 2)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verity that datasheets are current before placingorders.
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