RN3Z Ver la hoja de datos (PDF) - Diode Semiconductor Korea

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RN3Z

HIGH EFFICIENCY RECTIFIER

Diode Semiconductor Korea 

Diode Semiconductor Korea

RN3Z(Z)

FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

50

10

N 1.

N 1.

(+)

25VDC

(approx)

(-)

D.U.T.

1

NONIN-

DUCTIVE

OSCILLOSCOPE

(NOTE1)

PULSE

GENERATOR

(NOTE2)

NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.

JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .

trr

+0.5A

0

-0.25A

-1.0A

1cm

SET TIME BASE FOR 10/20 ns/cm

FIG.2 -- TYPICAL FORWARD CHARACTERISTIC

100

TJ=25

Pulse Width=300 µS

10

1

0.1

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

INSTANTANEOUS FORWARD VOLTAGE, VOLTS

FIG.4 --TYPICAL JUNCTION CAPACITANCE

200

100

70

TJ=25

f=1MHz

20

10

.1 .2 .4

1.0 2 4

10 20 40

100

REVERSE VOLTAGE,VOLTS

FIG.3 --FORWARD DERATING CURVE

3.0

2.0

Single Phase

Half Wave 60Hz

Resistive or

Inductive Load

1.0

0

0

25

50 75 100 125

AMBIENT TEMPERATURE,

FIG.5--PEAK FORWARD SURGE CURRENT

80

70

60

50

40

30

20

10

0

1

TJ=125

8.3ms Single Half

Sine-Wave

2

4

8 10 20

40 60 80 100

NUMBER OF CYCLES AT 60Hz

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