2SC4793 Ver la hoja de datos (PDF) - Toshiba

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2SC4793

TOSHIBA Transistor Silicon NPN Epitaxial Type

Toshiba 

Electrical Characteristics (Tc = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

Test Condition

ICBO

IEBO

V (BR) CEO

hFE

VCE (sat)

VBE

fT

Cob

VCB = 230 V, IE = 0

VEB = 5 V, IC = 0

IC = 10 mA, IB = 0

VCE = 5 V, IC = 100 mA

IC = 500 mA, IB = 50 mA

VCE = 5 V, IC = 500 mA

VCE = 10 V, IC = 100 mA

VCB = 10 V, IE = 0, f = 1 MHz

Marking

2SC4793

Min Typ. Max Unit

―

―

1.0

μA

―

―

1.0

μA

230 ―

―

V

100

―

320

―

―

1.5

V

―

―

1.0

V

― 100 ― MHz

―

20

―

pF

C4793

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-10

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