SSF45N20B Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
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Lista de partido
SSF45N20B Datasheet PDF : 8 Pages
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Typical Characteristics
102
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
101
100
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
V = 10V
GS
VGS = 20V
※ Note : TJ = 25℃
35
70
105
140
175
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
10000
8000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
6000
4000
2000
C
iss
C
oss
C
rss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
102
101
150oC
100
25oC
10-1
2
-55oC
※ Notes :
1.
2.
V25DS0μ=s40PVulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
0.2
150℃ 25℃
※ Notes :
1. V = 0V
2. 25GS0μ s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 40V
10
V = 100V
DS
V = 160V
DS
8
6
4
2
※ Note : ID = 45 A
0
0
30
60
90
120
150
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. C, November 2001
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