K20N60HS(2008) Ver la hoja de datos (PDF) - Infineon Technologies

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K20N60HS
(Rev.:2008)

High Speed IGBT in NPT-technology

Infineon Technologies 

SKW20N60HS

400ns

300ns

IF=40A

200ns

IF=20A

100ns

200A/µs

400A/µs

600A/µs

IF=10A

800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 21. Typical reverse recovery time as

a function of diode current slope

(VR=400V, TJ=150°C,

Dynamic test circuit in Figure E)

2,0µC

1,5µC

1,0µC

0,5µC

IF=40A

IF=20A

IF=10A

0,0µC

200A/µs

400A/µs

600A/µs

800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 22. Typical reverse recovery charge

as a function of diode current

slope

(VR=400V, TJ=150°C,

Dynamic test circuit in Figure E)

25A

IF=40A IF=20A

20A

15A

IF=10A

10A

5A

0A

200A/µs 400A/µs 600A/µs 800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery current

as a function of diode current

slope

(VR=400V, TJ=150°C,

Dynamic test circuit in Figure E)

-400A/µs

-300A/µs

-200A/µs

-100A/µs

-0A/µs

200A/µs

400A/µs

600A/µs

800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(VR=400V, TJ=150°C,

Dynamic test circuit in Figure E)

Power Semiconductors

10

Rev. 2.3 Sep 08

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