K20N60HS Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Lista de partido

K20N60HS

High Speed IGBT in NPT-technology

Infineon Technologies 

SKW20N60HS

^

TJ=-55°C

25°C

150°C

30A

20A

10A

0A

0,0V

0,5V

1,0V

1,5V

VF, FORWARD VOLTAGE

Figure 25. Typical diode forward current as

a function of forward voltage

2,0V

1,8V

IF=40A

1,6V

1,4V

IF=20A

1,2V

IF=10A

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 26. Typical diode forward voltage as a

function of junction temperature

100K/W D=0.5

0.2

0.1

0.05

1 0 -1K /W

0.02

0.01

R,(K/W)

0.311

0.271

0.221

0.584

0.314

R1

τ, (s)

7.83*10-2

1.21*10-2

1.36*10-3

1.53*10-4

2.50*10-5

R2

single pulse

C1=τ1/R1 C2=τ2/R2

1 0 -2K /W

1µs 10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 27. Diode transient thermal

impedance as a function of pulse

width

(D=tP/T)

Power Semiconductors

11

Rev. 2.2 June 06

Share Link: