BAW156 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Lista de partido

BAW156

Silicon Low Leakage Diode

Infineon Technologies 

Silicon Low Leakage Diode

• Low-leakage applications

• Medium speed switching times

• Common anode configuration

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

BAW156...

BAW156

!

,

,



Type

BAW156

Package

SOT23

Configuration

common anode

Marking

JZs

Maximum Ratings at TA = 25°C, unless otherwise specified

Parameter

Symbol

Value

Unit

Diode reverse voltage

Peak reverse voltage

Forward current

VR

VRM

IF

80

V

85

200

mA

Non-repetitive peak surge forward current

t = 1 µs

IFSM

A

4.5

t=1s

0.5

Total power dissipation

Ts ≤ 31°C

Junction temperature

Ptot

250

mW

Tj

150

°C

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Parameter

Junction - soldering point2)

BAW156

Symbol

RthJS

Value

Unit

≤ 360

K/W

1Pb-containing package may be available upon special request

2For calculation of RthJA please refer to Application Note Thermal Resistance

1

2007-04-20

Share Link: