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2N5667N1

NPN POWER SILICON SWITCHING TRANSISTOR

TT Electronics. 

NPN POWER SILICON

SWITCHING TRANSISTOR

2N5667N1

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)

Symbols Parameters

Test Conditions

V(BR)CER(1)

V(BR)EBO(1)

ICES

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector-Emitter Cut-Off

Current

IC = 1.0mA

IE = 10µA

VCE = 300V

RBE = 100Ω

IC = 0A

TA = 150°C

ICBO

Collector-Base Cut-Off

Current

VCB = 300V

VCB = 400V

IC = 0.5A

VCE = 2V

hFE(1)

Forward-current transfer

ratio

IC = 1.0A

IC = 3A

VCE = 5V

TA = -55°C

VCE = 5V

IC = 5A

VCE = 5V

VCE(sat)(1)

Collector-Emitter Saturation

Voltage

IC = 3A

IC = 5A

IB = 0.6A

IB = 1.0A

VBE(sat)(1)

Base-Emitter Saturation

Voltage

IC = 3A

IC = 5A

IB = 0.6A

IB = 1.0A

DYNAMIC CHARACTERISTICS

| hfe |

Magnitude of Common-

Emitter Small-Signal Short-

Circuit forward Current,

Transfer Ratio

Cobo

Output Capacitance

IC = 0.5A

f = 10MHz

VCB = 10V

f = 1.0MHz

ton

Turn-On Time

IC = 1.0A

VCE = 5V

IE = 0

VCC = 100V

toff

Turn-Off Time

IB1 = - IB2 = 50mA

Notes

(1) Pulse Width ≤ 300us, δ ≤ 2%

Min. Typ Max. Units

400

V

6

0.2

100

µA

0.1

1.0

mA

25

25

75

10

-

10

5

0.4

1.0

V

1.2

1.5

2

7

-

120

pF

0.4

µs

2.5

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 9189

Website: http://www.semelab-tt.com

Issue 1

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