EMC1063-1-ACZL-TR(2007) Ver la hoja de datos (PDF) - SMSC -> Microchip

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EMC1063-1-ACZL-TR
(Rev.:2007)

1°C Triple Temperature Sensor with Hotter of Two Zones

SMSC -> Microchip 

3.3.1

3.3.2

1°C Triple Temperature Sensor with Hotter of Two Zones

Datasheet

HOTTER bit is cleared (set to ‘0’), and the results of the two remote zones are stored in their

respective registers.

Conversion Rates

The EMC1063 may be configured for different conversion rates based on the system requirements.

The available rates are 1 full set of conversions per second to 16 full sets of conversions per second.

The conversion rate is configured as described in Section 4.4. The available conversion rates are

shown in Table 4.4.

Dynamic Averaging

The EMC1063 temperature channels support a new feature that measures the external diode channels

for an extended time based on the selected conversion rate. This functionality can be disabled as

described in Section 4.5 for increased power savings at the lower conversion rates. When Dynamic

Averaging is enabled, the device will automatically adjust the sampling and measurement time for both

external diode channels. This allows the device to average 2x or 4x longer than the normal 11 bit

operation while still maintaining the selected conversion rate. The benefits of Dynamic Averaging are

improved noise rejection due to the longer integration time as well as less random variation on the

temperature measurement.

The Dynamic Averaging applies when a One-Shot command is issued. The device will perform the

desired averaging during the one-shot operation according to the selected conversion rate.

The Dynamic Averaging will affect the average supply current based on the chosen conversion rate

as shown in Table 3.1.

Table 3.1 Supply Current vs. Conversion Rate and ADC Averaging Factor

CONVERSION RATE

4X

(MAX_RES = 1)

(DA_n = 0)

1 / sec

2 / sec

4 / sec

8 / sec

16 / sec

190uA

315uA

580uA

N/A

N/A

ADC AVERAGING FACTOR

2X

(MAX_RES = 0)

(DA_n = 0)

132uA

205uA

350uA

640uA

N/A

1X

(DA_n = 1)

105uA

150uA

235uA

405uA

750uA

3.4

Temperature Monitors

In general, thermal diode temperature measurements are based on the change in forward bias voltage

of a diode when operated at two different currents. This ΔVBE is then proportional to absolute

temperature as shown in the following equation:

where:

ΔVBE

= VBE _ HIGH

− VBE _ LOW

= ηkT

q

ln⎜⎜⎝⎛

I HIGH

I LOW

⎟⎟⎠⎞

k = Boltzmann’s constant

T = absolute temperature in Kelvin

q = electron charge

[1]

η = diode ideality factor

Revision 1.37 (02-05-07)

12

DATASHEET

SMSC EMC1063

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