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MUR105 Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza
componentes Descripción
Lista de partido
MUR105
NJSEMI
New Jersey Semiconductor NJSEMI
MUR105 Datasheet PDF : 1 Pages
1
^
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MUR105 MUR150
MUR110 MUR160
MUR115 MUR170
MUR120 MUR180
MUR130 MUR190
MUR140 MUR1100
SWITCHMODE POWER RECTIRERS
... designed for use in switching power supplies, inverters and
as free wheeling diodes, these state-of-the-art devices have the
following features:
• Ultrafast 25, 50 and 75 Nanosecond Recovery Times
• 175°C Operating Junction Temperature
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Reverse Voltage to 1000 Volts
ULTRAFAST
RECTIFIERS
1.0 AMPERE
80-1000 VOLTS
PLASTIC PACKAGE
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse VolUge
DC Blocking Voltage
Average Rectified Forwent Current (Square Wave
Mounting Method #3 Per Note 1)
Symbol
VRRM
VRWM
VR
'RAVI
MUR
1W 110 115 120 130 140 150 160 170 1(0 IN HBO Unit
so 100 150 200 300 400 500 600 700 800 900 1000 Volts
i.o @TA -
130-C
1.0@TA - i20*c
1.0@TA - ss-c Amps
Nonrepetitive Peak Surge Currant
(Surge epplied at rated load conditions, halfweve,
•Ingle phase. 60 Hz)
Operating Junction Temperature end
Storage Temperature
IFSM
TJ. T«g
35
-BE to +175
Ampt
•c
THERMAL CHARACTERISTICS
[Maximum Thermal Reeiitance. Junction to Ambient |
See Note 1
•c/w
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
VF
(iF-1.0Amp,Tj-150-C)
0.710
1.05
(lF-1.0Amp,Tj-25-C)
0.875
1.25
Volts
1.50
1.75
Meximum Instantaneoue Reverse Current (1)
iR
(Rated dcVoltage, Tj - 1WC)
50
150
(Rated dc Voltage, Tj - 25*C)
2.0
5.0
pA
600
10
Meximum Reverie Recovery Time
trr
dp- 1.0 Amp, di/dt-60 Amp/ps)
35
75
• dp -0.5 Amp, IR- 1.0 Amp, lREC-0-26 A)
25
50
ne
100
76
Maximum Forward Recovery Time
«fr
25
50
(IF- 1.0 A, dl/dt - 100 A/**, IREC to 1.0 V)
75
ne

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