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S1AB Datasheet PDF : 5 Pages
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S1A/B - S1M/B
Maximum Ratings(@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
S1
A/AB
S1 S1 S1
B/BB D/DB G/GB
S1
J/JB
S1
K/KB
S1
M/MB
Unit
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
50
VR
RMS Reverse Voltage
VR(RMS)
35
Average Rectified Output Current
@ TT = +100°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on Rated Load
IFSM
100 200 400 600 800 1000 V
70 140 280 420 560 700 V
1.0
A
30
A
Thermal Characteristics
Characteristic
Typical Thermal Resistance, Junction to Terminal (Note 5)
Operating and Storage Temperature Range
Symbol
RθJT
TJ, TSTG
Value
30
-65 to +150
Unit
°C/W
°C
Electrical Characteristics(@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Forward Voltage
@ IF = 1.0A
VFM
—
—
1.1
Peak Reverse Leakage Current
at Rated DC Blocking Voltage
@ TA = +25°C
@ TA = +125°C
IRM
—
—
—
5.0
—
100
Reverse Recovery Time (Note 6)
trr
—
1.8
3.0
Typical Total Capacitance (Note 7)
CT
—
10
—
Notes:
5. Thermal resistance junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink.
6. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
7. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Unit
V
μA
μs
pF
1.0
10
Note 5
0.8
1.0
0.6
0.4
0.1
0.2
Resistive or
inductive load
0
40 60 80 100 120 140 160 180
TT, TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
0.01
0
0.4
0.8
1.2
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
S1A/B - S1M/B
Document number: DS16003 Rev. 24- 2
2of 5
www.diodes.com
December 2014
© Diodes Incorporated
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