ZTX1056A Ver la hoja de datos (PDF) - Diodes Incorporated.
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ZTX1056A Datasheet PDF : 4 Pages
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ZTX1056A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
200
310
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
200
310
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO
160
190
V
IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
200
310
V
IC=100µA, VEB=1V
Emitter-Base Breakdown V(BR)EBO
Voltage
5
8.8
V
IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
Collector Emitter Cut-Off ICES
Current
0.3
10
0.3
10
0.3
10
nA
VCB=150V
nA
VEB=4V
nA
VCES=150V
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
25
60
mV
IC=0.1A, IB=5mA*
95
140
mV
IC=1A, IB=50mA*
175
250
mV
IC=2A, IB=100mA*
220
300
mV
IC=3A, IB=200mA*
950
1050 mV
IC=3A, IB=200mA*
Base-Emitter Turn-On
Voltage
VBE(on)
860
950
mV
IC=3A, VCE=10V*
Static Forward Current hFE
Transfer Ratio
Transition Frequency
fT
275
420
300
450
1200
250
400
60
120
30
50
15
IC=10mA, VCE=10V*
IC=0.5A, VCE=10V*
IC=1A, VCE=10V*
IC=2A, VCE=10V*
IC=3A, VCE=10V*
IC=6A, VCE=10V*
120
MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Switching Times
Cobo
ton
toff
14
25
pF
110
ns
2450
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
VCB=10V, f=1MHz
IC=1A, IB=10mA, VCC=50V
IC=1A, IB=±10mA,
VCC=50V
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