IRF620 Ver la hoja de datos (PDF) - Unspecified

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IRF620

N-Channel Power Mosfets 7A,150-200V

Unspecified 

IRL220-223/IRF620-623

MTP7N18/7N20

N-Channel Power Mosfets

7A,150-200V

Electrical Characteristics (Cont.) (TC=25℃ unless otherwise noted)

Symbol

Characteristic

Min

Max Unit

On Characteristics

VGS(th)

Gate Threshold Voltage

IRF220-223/IRF620-623

MTP7N18/20

V

2.0

4.0

2.0

4.5

RDS(on)

Static Drain-Source On-Resistance2

IRF220/221/620/621

IRF222/223/622/623

MPT7N18/7N20

Ω

0.8

1.2

0.7

VDS(on)

Drain-Source On-Voltage 2

MTP7N18/7N20

2.45 V

5.9

V

5.0

V

gfs

Forward Transconductance

Dynamic Characteristics

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Switching Characteristics (TC=25℃, Figure 1,2)3

td(on)

Turn-on Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Qg

Total Gate Charge

1.3

S( )

600 pF

300 pF

80

pF

40

ns

60

ns

100 ns

60

ns

15

nC

Symbol

Characteristic

Typ

Max Unit

Source-Drain Diode Characteristics

VSD

Diode Forward Voltage

1.8

V

1.4

V

trf

Notes

Reverse Recovery Time

350

ns

1. TJ=+25℃ to +150℃

2. Pulse width limited by TJ

3. Switching time measurements performed on LEM TR-58 test equipment.

Test Conditions

ID=250µA, VDS=VGS

ID=1mA, VDS=VGS

VGS=10V, ID=2.5A

ID=3.5A

VGS=10V; ID=3.5A

VGS=10V; ID=7.0A

VGS=10V, ID=3.5A

TC=100℃

VDS=10V, ID=2.5A

VDS=25V, VGS=0V

f=1.0MHz

VDD=100V, ID=2.5A

VGS=10V, RGEN=50 Ω

RGS=50 Ω

VGS=10V, ID=6.0A

VDD=45V

Test Conditions

Is=5.0A; VGS=0V

IS=4.0A; VGS=0V

IS=5.0A; dIS/dt=25A/µS

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