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IRFR12N25DPBF

SMPS MOSFET

International Rectifier 

IRFR/U12N25DPbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

IDSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

IGSS

Gate-to-Source Reverse Leakage

250

–––

–––

3.0

–––

–––

–––

–––

–––

0.29

–––

–––

–––

–––

–––

–––

–––

–––

0.26

5.0

25

250

100

-100

V

V/°C

Ω

V

µA

nA

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA †

VGS = 10V, ID = 8.4A „

VDS = VGS, ID = 250µA

VDS = 200V, VGS = 0V

VDS = 160V, VGS = 0V, TJ = 150°C

VGS = 30V

VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

gfs

Forward Transconductance

6.8 ––– ––– S VDS = 25V, ID = 8.4A

Qg

Total Gate Charge

––– 23 35

ID = 8.4A

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

––– 5.8 8.7

––– 12 19

nC VDS = 200V

VGS = 10V, „

td(on)

Turn-On Delay Time

––– 9.1 –––

VDD = 125V

tr

td(off)

tf

Rise Time

Turn-Off Delay Time

Fall Time

––– 25 ––– ns ID = 8.4A

––– 16 –––

RG = 6.8Ω

––– 9.2 –––

VGS = 10V „

Ciss

Input Capacitance

––– 810 –––

VGS = 0V

Coss

Output Capacitance

––– 130 –––

VDS = 25V

Crss

Reverse Transfer Capacitance

––– 22 ––– pF ƒ = 1.0MHz

Coss

Output Capacitance

––– 1100 –––

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

Coss

Coss eff.

Output Capacitance

Effective Output Capacitance

––– 50 –––

––– 130 –––

VGS = 0V, VDS = 200V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 200V …

Avalanche Characteristics

Parameter

EAS

Single Pulse Avalanche Energy‚

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

Typ.

–––

–––

–––

Max.

250

8.4

14

Units

mJ

A

mJ

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

2

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 14

A showing the

integral reverse

G

––– ––– 56

p-n junction diode.

S

––– ––– 1.5 V TJ = 25°C, IS = 8.4A, VGS = 0V „

––– 140 ––– ns TJ = 25°C, IF = 8.4A

––– 710 ––– nC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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