D2140 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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D2140

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 140V(Min)

·Wide Area of Safe Operation

·Complement to Type 2SB1421

APPLICATIONS

·Designed for high power amplifications.

·Optimum for the output stage of a HiFi audio amplifier

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

140

V

VCEO

Collector-Emitter Voltage

140

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

7

A

ICP

Collector Current-Pulse

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

12

A

80

W

2.5

150

℃

Tstg

Storage Temperature Range

-55~150

℃

SPTECH website：www.superic-tech.com

2SD2140

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