MCP111/112
VDD
VTRIP
1V
tRPU
tRPD
1V
VOUT
VOH
tRT
VOL
FIGURE 1-1:
Timing Diagram.
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ
(only MCP111), TA = -40°C to +125°C.
Parameters
Sym Min Typ
Max Units
Conditions
VDD Detect to VOUT Inactive
tRPU
—
90
—
µs Figure 1-1 and CL = 50 pF
(Note 1)
VDD Detect to VOUT Active
VOUT Rise Time After VOUT Active
tRPD
—
130
—
tRT
—
5
—
µs VDD ramped from VTRIP(MAX) +
250 mV down to VTRIP(MIN) –
250 mV, per Figure 1-1,
CL = 50 pF (Note 1)
µs For VOUT 10% to 90% of final
value per Figure 1-1, CL = 50 pF
(Note 1)
Note 1: These parameters are for design guidance only and are not 100% tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ
(only MCP111), TA = -40°C to +125°C.
Parameters
Sym Min Typ
Max Units
Conditions
Temperature Ranges
Specified Temperature Range
Specified Temperature Range
TA
-40
—
+85
°C MCP1XX-195
TA
-40
—
+125
°C Except MCP1XX-195
Maximum Junction Temperature
TJ
—
—
+150
°C
Storage Temperature Range
TA
-65
—
+150
°C
Package Thermal Resistances
Thermal Resistance, 3L-SOT23
θJA
—
336
—
°C/W
Thermal Resistance, 3L-SC-70
θJA
—
340
—
°C/W
Thermal Resistance, 3L-TO-92
θJA
— 131.9
—
°C/W
Thermal Resistance, 3L-SOT-89
θJA
—
110
—
°C/W
DS21889D-page 4
© 2005 Microchip Technology Inc.