IRF523 Ver la hoja de datos (PDF) - Unspecified
Número de pieza
componentes Descripción
Lista de partido
IRF523 Datasheet PDF : 5 Pages
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IRF120-123/IRF520-523
MTP10N08/10N10
N-Channel Power Mosfets,
11A,60-100V
Maximum Rating
Symbol Characteristic
VDSS
VDGR
VGS
TJ,Tstg
TL
Drain to Source Voltage1
Drain to Gate Voltage1
RGS=20kΩ
Gate to Source Voltage
Operating Junction and
Storage Temperature
Maximum Lead Temperature
for Soldering Purposes,
1/8” From Case for 5s
Maximum Thermal Characteristics
RӨJC
RӨJA
PD
IDM
Thermal Reistance
Junction to Case
Thermal Resistance,
Junction to Ambient
Total Power Dissipation
at Tc=25℃
Pulsed Drain Current 2
Rating
IRF120/122
IRF520/522
MTP10N10
100
100
±20
-55 to +150
275
Rating
MTP10N08
80
80
±20
-55 to +150
275
IRF120-123/IRF520-523
3.12
30/80
40
20
Rating
IRF122/123
IRF522/523
60
60
±20
-55 to +150
275
MTP10N08/10
1.67
80
75
32
Unit
V
V
V
℃
℃
℃/W
℃/W
W
A
Electrical Characteristics (Tc=25℃ unless otherwise noted)
Symbol
Characteristic
Min
Off Characteristics
V(BR)DSS
Drain Source Breakdown Voltage1 100
IRF120/122/520/522/
MTP10N10
MTP10N08
80
IRF121/123/521/523
60
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
IRF120-123
IRF520-523/MTP10N08/10
Max
250
1000
±100
±500
Unit
V
Test Conditionss
VGS=0V, ID=250µA
µA
VDS=Rated VDSS,VGS=0V
µA
VDS=0.8x Rated VDSS,
VGS=0V, Tc=125℃
nA
VGS=±20V,VDS=0V
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