IRF440 Ver la hoja de datos (PDF) - Unspecified
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Lista de partido
IRF440 Datasheet PDF : 5 Pages
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IRF440-443/IRF840-843
MTM7N45/7N50
N-Channel Power MOSFETs
8A, 450V/500V
Electrical Characteristics (Tc=25℃ unless otherwise noted)
Symbol Characteristic
Min
Off Characteristics
V(BR)DSS
Drain Source Breakdown Voltage1
MTM7N50
500
MTM7N45
450
IDSS
Zero Gate Voltage Drain Current
Max
0.25
2.5
IGSS
Gate-Body Leakage Current
On Characteristics
VGS(th)
Gate Threshold Voltage
±500
2.0
4.5
1.5
4.0
RDS(on)
Static Drain-Source On-Resistance2
0.8
VDS(on)
Drain-Source On-Voltage2
2.8
7.0
5.6
gfs
Forward Transconductance
4.0
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics (Tc=25℃, Figure 9,10)3
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-On Delay Time
tf
Fall Time
Qg
Total Gate Charge
1800
350
150
60
150
200
120
60
Notes
1. TJ=+25℃ to +150℃
2. Pulse test: Pulse width ≤ 80µs, Duty cycle ≤ 1%
3. Switching time measurements performed on LEM TR-58 test equipment
Unit
V
mA
mA
nA
V
V
Ω
V
V
V
S( )
pF
pF
pF
ns
ns
ns
ns
nC
Test Conditions
VGS=0V, ID=5.0mA
VDS=0.85 x Rated VDSS,
VGS=0V
VDS=0.85 x Rated VDSS,
VGS=0V, Tc=100℃
VGS=±20V, VDS=0V
ID=1.0mA, VDS=VGS
ID=1.0mA, VDS=VGS
TC=100℃
VGS=10V, ID=3.5A
VGS=10V, ID=3.5A
VGS=10V, ID=7.0A
VGS=10V, ID=3.5A
Tc=100℃
VDS=10V, ID≈4.0A
VDS=25V, VGS=0V
f=1.0MHz
VDD=25V, ID=3.5A
VGS=10V, RGEN=50 Ω
RGS=50 Ω
VGS=10V, ID=12A
VDD=400V
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