IRFS730A Ver la hoja de datos (PDF) - Inchange Semiconductor

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IRFS730A

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

isc Product Specification

IRFS730A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS Drain-Source Breakdown Voltage

VGS= 0; ID= 0.25mA

VGS(th) Gate Threshold Voltage

RDS(on) Drain-Source On-Resistance

IGSS

Gate-Body Leakage Current

IDSS

Zero Gate Voltage Drain Current

VSD

Forward On-Voltage

VDS= VGS; ID= 0.25mA

VGS= 10V; ID= 1.95A

VGS= ±30V;VDS= 0

VDS= 400V; VGS= 0

VDS= 320V; VGS= 0; Tj= 125℃

IS= 3.9A; VGS= 0

MIN MAX UNIT

400

V

2

4

V

1

Ω

±100

nA

10

100

μA

1.5

V

·

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