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AAT3236

300mA CMOS High Performance LDO

Advanced Analogic Technologies 

AAT3236

300mA CMOS High Performance LDO

Electrical Characteristics

VIN = VOUT(NOM) + 1V, IOUT = 1mA, COUT = 2.2µF, CIN = 1µF, CBYP = 10nF, TA = -40°C to +85°C, unless other-

wise noted. For typical values, TA = 25°C.

Symbol Description

Conditions

Min Typ Max Units

VOUT Output Voltage Tolerance

IOUT = 1mA to 300mA

TA = 25°C

-1.5

TA = -40 to 85°C -2.5

1.5

%

2.5

IOUT

Output Current

VOUT > 1.2V

300

mA

VDO

Dropout Voltage1

IOUT = 300mA

300 500 mV

ISC

Short-Circuit Current

VOUT < 0.4V

600

mA

IQ

Ground Current

VIN = 5V, No Load, EN = VIN

100 150

µA

ISD

Shutdown Current

VIN = 5V, EN = 0V

1

µA

ΔVOUT/

VOUT*ΔVIN

Line Regulation

VIN = VOUT + 1 to 5.5V

0.07 %/V

ΔVOUT(line) Dynamic Line Regulation

VIN = VOUT + 1V to VOUT + 2V,

IOUT = 150mA, TR/TF = 2µs

1

mV

ΔVOUT(load) Dynamic Load Regulation

IOUT = 1mA to 150mA, TR <5µs

30

mV

VEN(L) Enable Threshold Low

0.6

V

VEN(H) Enable Threshold High

1.5

V

IEN

Leakage Current Enable Pin VEN = 5V

1

µA

1kHz

70

PSRR

Power Supply Rejection Ratio IOUT = 10mA, CBYP = 10nF 10kHz

1MHz

50

dB

47

Over-Temperature Shutdown

TSD

Threshold

150

°C

THYS

Over-Temperature Shutdown

Hysteresis

10

°C

eN

Output Noise

Output Voltage Temperature

TC

Coefficient

45

µVRMS

22

ppm/°C

1. VDO is defined as VIN - VOUT when VOUT is 98% of nominal.

4

3236.2007.03.1.4

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