IRF5802PBF(2005) Ver la hoja de datos (PDF) - International Rectifier

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IRF5802PBF
(Rev.:2005)

SMPS MOSFET

International Rectifier 

IRF5802PbF

2.80

6.00

2.40

4.00

2.00

1.60

ID = 0.54A

2.00

VGS = 10V

1.20

0.80

6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0

VGS, Gate -to -Source Voltage (V)

Fig 12. Typical On-Resistance Vs. Gate

Voltage

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

VGS

3mA

D.U.T.

+

-VDS

VGS

QGS

VG

QG

QGD

Charge

IG

ID

Current Sampling Resistors

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

0.00

0

2

4

6

ID , Drain Current (A)

Fig 13. Typical On-Resistance Vs. Drain

Current

25

ID

TOP

0.40A

0.70A

20

BOTTOM 0.90A

15

10

V(BR)DSS

tp

I AS

VDS

L

RG

20V

tp

D.U.T

IAS

0.01Ω

15V

DRIVER

+

- VDD

A

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

6

5

0

25

50

75

100

125

150

Starting TJ, Junction Temperature ( °C)

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

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