IRFR3710ZPBF Ver la hoja de datos (PDF) - Infineon Technologies
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Lista de partido
IRFR3710ZPBF Datasheet PDF : 13 Pages
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Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Multiple Package Options
Lead-Free
IRFR3710ZPbF
IRFU3710ZPbF
IRFU3710Z-701PbF
HEXFET® Power MOSFET
VDSS
RDS(on)
ID
100V
18m
42A
D
D
Description
This HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
a wide variety of applications.
S
S
G
GD
D- Pak
IRFR3710ZPbF
I- Pak
IRFU3710ZPbF
I-Pak Lead form 701
IRFU3710Z-701PbF
Refer to page 11 for package outline
G
Gate
D
Drain
S
Source
Base part number
IRFU3710ZPbF
IRFR3710ZPbF
Package Type
I-Pak
D-Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Quantity
75
75
3000
Orderable Part Number
IRFU3710ZPbF
IRFR3710ZPbF
IRFR3710ZTRLPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
EAS (Tested )
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
56
39
42
220
140
0.95
± 20
150
200
See Fig.12a, 12b, 15, 16
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
RJC
RJA
RJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
°C/W
1
2016-5-31
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