IRG4PC60UPBF Ver la hoja de datos (PDF) - International Rectifier

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IRG4PC60UPBF

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

International Rectifier 

IRG4PC60UPbF

80

Square wave:

Triangular wave:

60% of rated

voltage

60

Clamp voltage:

Ideal diodes

80% of rated

40

For both:

Duty cycle : 50%

20

Tj = 125°C

Tsink = 90°C

Gate drive as specified

Power Dissipation = 73W

0

0.1

1

10

100

f , Frequency ( kHz )

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)

1000

100

TJ = 150°C

10

1

TJ = 25°C

VGE = 15V

20µs PULSE WIDTH

0.1

0.0

1.0

2.0

3.0

4.0

5.0

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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1000

100

TJ = 150°C

10

TJ = 25°C

VCC = 10V

5µs PULSE WIDTH

1

4 5 6 7 8 9 10 11

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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